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Net Doping
Net Doping
net doping of a GaAs / AlGaAs / InGaAs-HEMT (High Electron Mobility Transistor)
If you would like to see more about device simulation, see our publications e.g. "New approaches to a simulation-assisted design and process development"
back to device simulation services
Semiconductor Simulation Services
DEVICE SIMULATION:
With Silvacos VIRTUAL WAFER FAB we're able to simulate:
-MOSFET-
-MESFET-
-HBT-
-HEMT-
devices with advanced materials (SiGe, GaAs or other ternary and quaternary materials). A direct impact of layer-, recess- or other modifications to the device behavior thus can easily be made visible.
Simulation Input:
Detailled device structure including (recess) dimensions, layer structure and doping profile.
Simulation Output:
- Input/output characteristic
- contour plots, e.g.
net doping,
electron concentration,
current density,
e-field, hole concentration, potential from various working points
- Cutlines (e.g. band parameters), DC-analysis (e.g. threshold voltage,
  transconductance, subthreshold voltage).
- AC-analysis (e.g. ft, fmax, S-parameters).
- transient analysis

Available models
A wide range of numerous models for all these materials are (among others)
available, e.g.
- Fermi-Dirac and Boltzmann statistics
- Drift-diffusion transport models
- Energy balance transport models (velocity overshoot is included)
- Field- and doping dependand mobility
- Graded and abrupt heterojunctions
- Bandgap Norrowing and high doping effects
- Shockley-Read-Hall, Auger-and surface recombination
- Hot carrier effects
For more detailled information about SiGe hetero-FET device simulation see our Solid State Technology-publication "New approaches to a simulation-assisted design and process development" (March 1997)
or other PUBLICATIONS