Simulation
Semiconductor Simulation Services |
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DEVICE SIMULATION: |
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| With Silvacos VIRTUAL WAFER FAB we're able to simulate: | ||||||||||
| -MOSFET- -MESFET- -HBT- -HEMT- |
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devices with advanced materials (SiGe, GaAs or other ternary and quaternary materials). A direct impact of layer-, recess- or other modifications to the device behavior thus can easily be made visible.
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Simulation Input: |
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| Detailled device structure including (recess) dimensions, layer structure and doping profile. | ||||||||||
Simulation Output: |
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| - Input/output characteristic - contour plots, e.g. |
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| - Cutlines (e.g. band parameters), DC-analysis (e.g. threshold voltage, transconductance, subthreshold voltage). |
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| - AC-analysis (e.g. ft, fmax, S-parameters). | ||||||||||
| - transient analysis | ||||||||||
Available models |
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| A wide range of numerous models for all these materials are (among others) available, e.g. |
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| - Fermi-Dirac and Boltzmann statistics | ||||||||||
| - Drift-diffusion transport models | ||||||||||
| - Energy balance transport models (velocity overshoot is included) | ||||||||||
| - Field- and doping dependand mobility | ||||||||||
| - Graded and abrupt heterojunctions | ||||||||||
| - Bandgap Norrowing and high doping effects | ||||||||||
| - Shockley-Read-Hall, Auger-and surface recombination | ||||||||||
| - Hot carrier effects | ||||||||||
| For more detailled information about SiGe hetero-FET device simulation see our Solid State Technology-publication "New approaches to a simulation-assisted design and process development" (March 1997) | ||||||||||
| or other PUBLICATIONS | ||||||||||
